Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films
Identifieur interne : 000591 ( Main/Exploration ); précédent : 000590; suivant : 000592Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films
Auteurs : M. Hemmous [Algérie] ; A. Layadi [Algérie] ; A. Guittoum [Algérie] ; A. Bourzami [Algérie] ; A. Benabbas [Algérie]Source :
- Microelectronics journal [ 0959-8324 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Wicri :
- topic : Nickel.
English descriptors
- KwdEn :
Abstract
We have studied the effect of substrates [glass and Si(1 0 0)], of Ni thickness (tNi) and of the deposition rate [v1 = 13 nm/min and v2 = 22 nm/min] on the structural and electrical properties of evaporated Ni thin films. The Ni thickness, measured by the Rutherford backscattering (RBS) technique, ranges from 28 to 200 nm. From X-ray diffraction, it was found that all samples are polycrystalline and grow with the < 111 > texture. From the measure of the lattice constant, we inferred that Ni/Si samples are under a higher tensile stress than the Ni/glass ones. Moreover, in Ni/glass deposited at v1, stress is relived as tNi increases while those deposited at v2 are almost stress-free. The grain size (D) in Ni/glass with low deposition rate monotonously increases (from 54 to 140 A) as tNi increases and are lower than those corresponding to Ni/Si. On the other hand, samples grown at v2 have a constant D, for small tNi with D in Ni/glass larger than D in Ni/Si. Ni/glass deposited at low v1 are characterized by a higher electrical resistivity (p) than those deposited at v2. For the latter series, p is practically constant with tNi but decreases with increasing grain size, indicating that diffusion at the grain boundaries rather than surface effect is responsible for the variation of p in this thickness range. For the Ni/glass deposed at v1 and the Ni/Si series, p has a more complex variation with thickness and deposition rate. These results will be discussed and correlated.
Affiliations:
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Le document en format XML
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Grain boundaries</term>
<term>Grain size</term>
<term>Nickel</term>
<term>Polycrystals</term>
<term>RBS</term>
<term>Sheet resistivity</term>
<term>Surface effect</term>
<term>Tensile stress</term>
<term>Thin films</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term>
<term>Structure cristalline</term>
<term>Résistivité couche</term>
<term>RBS</term>
<term>Diffraction RX</term>
<term>Contrainte traction</term>
<term>Grosseur grain</term>
<term>Conductivité électrique</term>
<term>Joint grain</term>
<term>Effet surface</term>
<term>Nickel</term>
<term>Couche mince</term>
<term>Polycristal</term>
<term>Substrat Si</term>
<term>Substrat verre</term>
<term>Ni</term>
<term>6855J</term>
<term>7361A</term>
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<front><div type="abstract" xml:lang="en">We have studied the effect of substrates [glass and Si(1 0 0)], of Ni thickness (t<sub>Ni</sub>
) and of the deposition rate [v<sub>1</sub>
= 13 nm/min and v<sub>2</sub>
= 22 nm/min] on the structural and electrical properties of evaporated Ni thin films. The Ni thickness, measured by the Rutherford backscattering (RBS) technique, ranges from 28 to 200 nm. From X-ray diffraction, it was found that all samples are polycrystalline and grow with the < 111 > texture. From the measure of the lattice constant, we inferred that Ni/Si samples are under a higher tensile stress than the Ni/glass ones. Moreover, in Ni/glass deposited at v<sub>1</sub>
, stress is relived as t<sub>Ni</sub>
increases while those deposited at v<sub>2</sub>
are almost stress-free. The grain size (D) in Ni/glass with low deposition rate monotonously increases (from 54 to 140 A) as t<sub>Ni</sub>
increases and are lower than those corresponding to Ni/Si. On the other hand, samples grown at v<sub>2</sub>
have a constant D, for small t<sub>Ni</sub>
with D in Ni/glass larger than D in Ni/Si. Ni/glass deposited at low v<sub>1</sub>
are characterized by a higher electrical resistivity (p) than those deposited at v<sub>2</sub>
. For the latter series, p is practically constant with t<sub>Ni</sub>
but decreases with increasing grain size, indicating that diffusion at the grain boundaries rather than surface effect is responsible for the variation of p in this thickness range. For the Ni/glass deposed at v<sub>1</sub>
and the Ni/Si series, p has a more complex variation with thickness and deposition rate. These results will be discussed and correlated.</div>
</front>
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